Monolithic integration of Si-PIN diodes and n-channel double-gate JFET's for room temperature X-ray spectroscopy
| Autor: | Alberto Fazzi, G.-F. Dalla Betta, Giovanni Verzellesi, Maurizio Boscardin, L. Bosisio, G. U. Pignatel |
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| Přispěvatelé: | DALLA BETTA, G. F., Pignatel, G. U., Verzellesi, G., Boscardin, M., Fazzi, A., Bosisio, Luciano |
| Jazyk: | angličtina |
| Rok vydání: | 2001 |
| Předmět: |
Physics
Nuclear and High Energy Physics PIN diode junction field effect transistor X-ray spectroscopy high resistivity silicon Silicon business.industry Transistor chemistry.chemical_element JFET Capacitance Noise (electronics) law.invention chemistry law Optoelectronics Field-effect transistor business Instrumentation Charge amplifier |
| Zdroj: | Fondazione Bruno Kessler-IRIS |
| Popis: | We report on Junction Field Effect Transistors and PIN diodes monolithically integrated on high-resistivity silicon by adopting a non-standard technology recently developed at IRST. In particular, a test structure, consisting of a small PIN diode DC-coupled to an integrated n-channel JFET in the double-gate configuration was fully characterised and spectroscopic measurements were carried out by adopting a novel double-feedback charge amplifier circuit. An ENC of about 60 electrons r.m.s. has been obtained at room temperature and at 10 μs shaping time; such a resolution is shown to be determined by the relatively high total capacitance present in this preliminary set-up, associated with the 1/ f series noise of the transistor. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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