Negative dispersion parameter of hydrogen diffusion in hydrogenated amorphous silicon

Autor:	H. Jia, R. Shinar, J. Shinar, X.-L. Wu
Rok vydání:	1993
Předmět:	chemistry.chemical_classification Amorphous silicon Physics chemistry.chemical_compound Crystallography chemistry Hydrogen chemistry.chemical_element Inorganic compound
Zdroj:	Physical Review B. 47:9361-9365
ISSN:	1095-3795 0163-1829
DOI:	10.1103/physrevb.47.9361
Popis:	The time-dependent diffusion constant [ital D][sub [ital H]]([ital t])=[ital D][sub 00]([omega][ital t])[sup [minus][alpha]] of hydrogen in rf sputter-deposited hydrogenated amorphous Si ([ital a]-Si:H) films containing [ital C][sub [ital H]]=3--5 at. % Si-bonded H was observed to increase with the time [ital t] at 300[le][ital T][le]380 [degree]C, i.e., the dispersion parameter [alpha] was negative. As in previous studies, [alpha]([ital T]) generally decreases with [ital T] up to a sample-dependent temperature [ital T][sub [ital m]], and increases at higher temperatures. The observed behavior is discussed in relation to structural relaxation processes which affect the distribution of H trapping energies.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47565870c3f57b2abf29d80f6c0cabe0 https://doi.org/10.1103/physrevb.47.9361 Zobrazit plný text záznamu