LPCVD of SiC layers in a hot-wall reactor using TMS precursor
| Autor: | Albert Figueras, A. Mazel, J. Sevely, B. Armas, Rafael Rodríguez-Clemente, Y. Casaux, F. Henry, V. Madigou, C. Combescure, P. Marti |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
010302 applied physics
Diffraction Hydrogen Chemistry General Physics and Astronomy Mineralogy chemistry.chemical_element Crystal growth 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology 01 natural sciences Volumetric flow rate chemistry.chemical_compound Chemical engineering [PHYS.HIST]Physics [physics]/Physics archives 0103 physical sciences Crystallite Total pressure 0210 nano-technology Tetramethylsilane |
| Zdroj: | Journal de Physique IV Proceedings Journal de Physique IV Proceedings, EDP Sciences, 1993, 03 (C3), pp.C3-329-C3-336. ⟨10.1051/jp4:1993345⟩ |
| ISSN: | 1155-4339 1764-7177 |
| DOI: | 10.1051/jp4:1993345 |
| Popis: | Sic polycrystalline layers were grown by LPCVD in a hot wall reactor using tetramethylsilane (TMS) diluted in hydrogen as precursor. The morphology and the structure of the films were analyzed in terms of deposition temperature, total pressure in the reactor and TMS flow rate. The layers have been characterized using various techniques : SEM, X-ray diffraction and TEM (HREM and EELS). |
| Databáze: | OpenAIRE |
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