Low Impedance ALD HfO2 Partially-Filled-Gap Flexural and Bulk MEMS Resonators Piezoresistively Detected for Distributed Mass Sensing
| Autor: | Adrian M. Ionescu, Emanuele A. Casu, Mariazel Maqueda Lopez, Montserrat Fernandez-Bolanos |
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| Rok vydání: | 2017 |
| Předmět: |
MEMS resonator
mass sensing Materials science Capacitive sensing Analytical chemistry quality factor resonance frequency lcsh:A hafnium oxide Resonator Microsystem high-k dielectric microsystems microfabrication Microelectromechanical systems micromechanical resonator business.industry Atomic Layer Deposition (ALD) mass sensor Piezoresistive effect MEMS silicon on insulator Optoelectronics lcsh:General Works business Coupling coefficient of resonators Microfabrication DC bias |
| Zdroj: | Proceedings, Vol 1, Iss 4, p 391 (2017) |
| DOI: | 10.3390/proceedings1040391 |
| Popis: | This paper reports the design and characterization of partially-filled-gap capacitive MEMS resonators for distributed mass sensing applications. By filling the gap with HfO2, the coupling coefficient between electrode-resonator increases by ×6.67 times and the motional resistance decreases by ×12 times in comparison with its counterpart in air. An improvement by a factor of ×5.6 in the Signal-To-Noise Ratio (SNR) for DC bias up to ×2.8 lower is accomplished by performing a piezoresistive detection instead of capacitive detection. Quality factor (Q) of 11,350 and motional resistances (Rm) of 926 Ω have been achieved for Parallel Beam Resonators (PBR) vibrating at 22.231 MHz. For the first time, ALD HfO2 partially-filled-gap MEMS resonators are proven to achieve inertial distributed mass sensitivities of the order of 4.28 kHz/pg for beam-type and 1.8k Hz/pg for disk resonators. |
| Databáze: | OpenAIRE |
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