High-performance solution-processed polymer ferroelectric field-effect transistors
| Autor: | Naber, RCG, Tanase, C, Blom, PWM, Gelinck, GH, Marsman, AW, Touwslager, FJ, Setayesh, S, De Leeuw, DM, Naber, Ronald C.G., Gelinck, Gerwin H., Marsman, Albert W., Touwslager, Fred J. |
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| Přispěvatelé: | Zernike Institute for Advanced Materials |
| Rok vydání: | 2005 |
| Předmět: |
Materials science
Orders of magnitude (temperature) FILMS Ferroelectric capacitor law.invention PHYSICS law ORGANIC TRANSISTORS General Materials Science VOLTAGE PENTACENE business.industry Mechanical Engineering MEMORY Transistor General Chemistry Condensed Matter Physics Ferroelectricity Organic semiconductor Semiconductor Band bending MOBILITY Mechanics of Materials Optoelectronics Field-effect transistor RETENTION CHARACTERISTICS GATE INSULATOR business |
| Zdroj: | Nature Materials, 4(3), 243-248. Nature Publishing Group |
| ISSN: | 1476-4660 1476-1122 |
| DOI: | 10.1038/nmat1329 |
| Popis: | We demonstrate a rewritable, non-volatile memory device with flexible plastic active layers deposited from solution. The memory device is a ferroelectric field-effect transistor (FeFET) made with a ferroelectric fluoropolymer and a bisalkoxy-substituted poly(p-phenylene vinylene) semiconductor material. The on- and off-state drain currents differ by several orders of magnitude, and have a long retention time, a high programming cycle endurance and short programming time. The remanent semiconductor surface charge density in the on- state has a high value of 18 mC m(-2), which explains the large on/off ratio. Application of a moderate gate field raises the surface charge to 26 mC m(-2), which is of a magnitude that is very difficult to obtain with conventional FETs because they are limited by dielectric breakdown of the gate insulator. In this way, the present ferroelectric-semiconductor interface extends the attainable field-effect band bending in organic semiconductors. |
| Databáze: | OpenAIRE |
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