Advances in Compact Modeling of Organic Field-Effect Transistors
| Autor: | Yvan Bonnassieux, Sungjune Jung, Chang-Hyun Kim, Sungyeop Jung, Benjamin Iniguez, Gilles Horowitz |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Computer science
flexible and printed electronics Semiconductor device modeling 02 engineering and technology 01 natural sciences law.invention Organic field-effect transistors (OFETs) law 0103 physical sciences Electrical and Electronic Engineering 010302 applied physics Organic field-effect transistor Transistor Numerical models compact modeling 021001 nanoscience & nanotechnology Engineering physics Flexible electronics Electronic Optical and Magnetic Materials device physics circuit simulation Field-effect transistor lcsh:Electrical engineering. Electronics. Nuclear engineering 0210 nano-technology lcsh:TK1-9971 Biotechnology |
| Zdroj: | IEEE Journal of the Electron Devices Society, Vol 8, Pp 1404-1415 (2020) |
| ISSN: | 2168-6734 |
| Popis: | In this review, recent advances in compact modeling of organic field-effect transistors (OFETs) are presented. Despite the inherent strength for printed flexible electronics and the extremely aggressive research conducted over more than three decades, the OFET technology still seems to remain at a relatively low technological readiness level. Among various possible reasons for that, the lack of a standard compact model, which effectively bridges the device- and system-level development, is clearly one of the most critical issues. This article broadly discusses the essential requirements, up-to-date progresses, and imminent challenges for the OFET compact device modeling toward a universal, physically valid, and applicable description of this fast-developing technology. |
| Databáze: | OpenAIRE |
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