Cadmium free high efficiency Cu 2 ZnSn(S,Se) 4 solar cell with Zn 1− x Sn x O y buffer layer
Autor: | Ali Newaz Bahar, Md. Mohiuddin Masum, Md. Asaduzzaman, Md. Mahmodul Hasan |
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Rok vydání: | 2017 |
Předmět: |
Materials science
Analytical chemistry Efficiency 02 engineering and technology 01 natural sciences law.invention Depletion region Stack (abstract data type) law ZTO buffer 0103 physical sciences Solar cell Surface layer Thin film 010302 applied physics business.industry Photovoltaic system Energy conversion efficiency General Engineering Electrical engineering Cd free CZTSSe solar cell Engineering (General). Civil engineering (General) 021001 nanoscience & nanotechnology Conduction band offset TA1-2040 0210 nano-technology business Current density |
Zdroj: | Alexandria Engineering Journal, Vol 56, Iss 2, Pp 225-229 (2017) |
ISSN: | 1110-0168 |
DOI: | 10.1016/j.aej.2016.12.017 |
Popis: | We have investigated the simulation approach of a one-dimensional online simulator named A Device Emulation Program and Tool ( ADEPT 2.1 ) and the device performances of a thin film solar cell based on Cu 2 ZnSn ( S,Se ) 4 ( CZTSSe ) absorber have been measured. Initiating with a thin film photovoltaic device structure consisting of n-ZnO : Al / i-ZnO / Zn 1 - x Sn x O y ( ZTO ) / CZTSSe / Mo / SLG stack, a graded space charge region ( SCR ) and an inverted surface layer ( ISL ) were inserted between the buffer and the absorber. The cadmium ( Cd ) free ZTO buffer, a competitive substitute to the CdS buffer, significantly contributes to improve the open-circuit voltage, V oc without deteriorating the short-circuit current density, J sc . The optimized solar cell performance parameters including V oc , J sc , fill factor ( FF ) , and efficiency ( η ) were calculated from the current density-voltage curve, also known as J – V characteristic curve. The FF was determined as 73.17 % , which in turns, yields a higher energy conversion efficiency of 14.09 % . |
Databáze: | OpenAIRE |
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