Distribution of the surface potential of epitaxial HgCdTe
| Autor: | D V Grigoryev, Sergey A. Dvoretsky, V. A. Novikov, D. A. Bezrodnyy |
|---|---|
| Přispěvatelé: | Томский государственный университет Научное управление Лаборатории НУ, Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ |
| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: |
теллурид кадмия ртути
Materials science Physics and Astronomy (miscellaneous) Condensed matter physics поверхностный потенциал Crystal structure молекулярно-лучевая эпитаксия Spatial distribution Epitaxy Crystallographic defect Molecular beam epitaxial growth Chemical physics Redistribution (chemistry) Molecular beam epitaxy Solid solution |
| Zdroj: | Applied physics letters. 2014. Vol. 105, № 10. P. 102107-1-102107-4 |
| Popis: | We studied the distribution of surface potential of the Hg1−xCdxTe epitaxial films grown by molecular beam epitaxy. The studies showed that the variation of the spatial distribution of surface potential in the region of the V-defect can be related to the variation of the material composition of epitaxial film. The V-defect is characterized by increased of Hg content with respect to the composition of the solid solution of Hg1−xCdxTe epitaxial film. In this paper, it was demonstrated that the unformed V-defects can be observed together with the macroscopic V-defects on the epitaxial film surface. These unformed V-defects can allow the creation of a complex surface potential distribution profile due to the redistribution of the solid solution composition. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|