Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer
| Autor: | Kuan-Chang Chang, Yin-Chih Pan, Ding-Hua Bao, Jen-Chung Lou, Syuan-Yong Huang, Jen-Wei Huang, Tsung-Ming Tsai, Simon M. Sze, Ting-Chang Chang, Dershin Gan, Kai-Huang Chen, Rui Zhang, Yong-En Syu, Jung-Hui Chen, Hui-Chun Huang, Tai-Fa Young |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Nano Express Zr business.industry Multiphysics Bilayer Nanotechnology Condensed Matter Physics Thermal conduction RRAM Space charge Resistive random-access memory Materials Science(all) Porous SiO2 Electric field Optoelectronics General Materials Science Thin film business Porosity Space charge limited current |
| Zdroj: | Nanoscale Research Letters |
| ISSN: | 1556-276X |
| DOI: | 10.1186/1556-276x-8-523 |
| Popis: | To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HRS) in resistive random access memory (RRAM) devices for the single-layer Zr:SiO2 and bilayer Zr:SiO2/porous SiO2 thin films were analyzed and discussed. In addition, the original space charge limited current (SCLC) conduction mechanism in LRS and HRS of the RRAM devices using bilayer Zr:SiO2/porous SiO2 thin films was found. Finally, a space electric field concentrated effect in the bilayer Zr:SiO2/porous SiO2 RRAM devices was also explained and verified by the COMSOL Multiphysics simulation model. |
| Databáze: | OpenAIRE |
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