High performing 8 /spl Orang/ EOT HfO/sub 2/ / tan low thermal-budget n-channel FETs with solid-phase epitaxially regrown (SPER) junctions
| Autor: | Lars-Ake Ragnarsson, S. De Gendt, Annelies Delabie, Trojmanm L, Katrina Johnson, Guido Groeseneken, K. De Meyer, Tom Schram, Simone Severi, D. P. Brunco, M.M. Heyns, Wilman Tsai |
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| Přispěvatelé: | Laboratoire d'Informatique, Signal et Image, Electronique et Télécommunication (LISITE), Institut Supérieur d'Electronique de Paris (ISEP), IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven) |
| Rok vydání: | 2005 |
| Předmět: |
010302 applied physics
Permittivity Materials science business.industry Annealing (metallurgy) 020209 energy Transistor Gate stack Electrical engineering 02 engineering and technology Dielectric Epitaxy 01 natural sciences law.invention law 0103 physical sciences Thermal 0202 electrical engineering electronic engineering information engineering Optoelectronics Field-effect transistor [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics business ComputingMilieux_MISCELLANEOUS |
| Zdroj: | Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 2005, Kyoto, Japan. pp.234-235, ⟨10.1109/.2005.1469281⟩ |
| DOI: | 10.1109/.2005.1469281 |
| Popis: | We demonstrate high-performing w-channel transistors with a HfO/sub 2//TaN gate stack and a low thermal budget process (570/spl deg/C anneal). The thinnest devices have an EOT of 8.3 A, a leakage current of 2.6 A/cm/sup 2/ at V/sub G/=1 V, and a drive-current of 815 /spl mu/A/um at an off-state current of 0.1 /spl mu/A//spl mu/m for VDD=1.2 V. We show that the performance improvement over identical gate-stacks processed with a 1000/spl deg/C spike anneal is related to a difference in V/sub T/. |
| Databáze: | OpenAIRE |
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