Predicting LER and LWR in SAQP with 3D virtual fabrication
| Autor: | Vasanth Allampalli, Jiangjiang Gu, Dalong Zhao, David M. Fried, Daniel Faken, Ken Greiner |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
0209 industrial biotechnology Fabrication Materials science business.industry Nanotechnology 02 engineering and technology Surface finish Line edge roughness 01 natural sciences Back end of line 020901 industrial engineering & automation Etching (microfabrication) 0103 physical sciences Optoelectronics business |
| Zdroj: | Advanced Etch Technology for Nanopatterning V |
| ISSN: | 0277-786X |
| DOI: | 10.1117/12.2218929 |
| Popis: | For the first time, process impact on line-edge roughness (LER) and line-width roughness (LWR) in a back-end-of-line (BEOL) self-aligned quadruple patterning (SAQP) flow has been systematically investigated through predictive 3D virtual fabrication. This frequency dependent LER study shows that both deposition and etching effectively reduce high frequency LER, while deposition is much more effective in reducing low frequency LER. Spacer-assisted patterning technology reduces LWR significantly by creating correlated edges, and further LWR improvement can be achieved by optimizing individual process effects on LER. Our study provides a guideline for the understanding and optimization of LER and LWR in advanced technology nodes. |
| Databáze: | OpenAIRE |
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