Patterning of 25 nm Contact Holes at 90 nm Pitch: Combination of Line/Space Double Exposure Immersion Lithography and Plasma-Assisted Shrink Technology

Autor:	Denis Shamiryan, Danny Goossens, Frederic Lazzarino, Olivier Richard, Vincent Truffert, Alain Vandervorst, Kaidong Xu, Werner Boullart, Jean-Francois de Marneffe
Rok vydání:	2011
Předmět:	chemistry.chemical_classification Materials science Physics and Astronomy (miscellaneous) business.industry General Engineering General Physics and Astronomy Dielectric Polymer Plasma Photoresist Optics chemistry Multiple patterning business Scaling Immersion lithography Next-generation lithography
Zdroj:	Japanese Journal of Applied Physics. 50:08JE07
ISSN:	1347-4065 0021-4922
Popis:	In this work, two methods are combined in order to provide 25 nm contact holes at 90 nm pitch: the line/space double exposure immersion lithography and the plasma-assisted shrink technology. We first present the line/space imaging method with negative tone development to create directly 45 nm CH at 90 nm pitch. Then, we discuss plasma-assisted shrink technology and how it applies to these small contacts. Plasma-assisted shrink technology relies on running a fast cyclic process, where plasma polymers are deposited on the photoresist mask, then subsequently redistributed over the features sidewalls, allowing in final a diameter reduction of approximatively 50%. Finally, for the metal-hard-mask patterning approach, the dielectric etch challenges driven by the dimensional scaling are analysed and discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4646069fe22e7a2f0e0ca4c528293a62 https://doi.org/10.1143/jjap.50.08je07 Zobrazit plný text záznamu