Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions
| Autor: | Siegfried Mantl, Qing-Tai Zhao, Florin Udrea, Cem Alper, Arnab Biswas, Adrian M. Ionescu, M. Foysol Chowdhury, G. V. Luong |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Physics Condensed matter physics business.industry Ambipolar diffusion Transconductance Electrical engineering Silicon on insulator 02 engineering and technology Unity gain 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials Benchmarking TFET compact model Subthreshold swing strained-Si (sSi) nanowire (NW) tunnel FET (TFET) 0103 physical sciences Figure of merit Electrical and Electronic Engineering Homojunction 0210 nano-technology business |
| Zdroj: | IEEE Transactions on Electron Devices. 64:1441-1448 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | This paper reports a compact ambipolar model for homojunction strained-silicon (sSi) nanowire (NW) tunnel FETs (TFETs) capable of accurately describing both ${I}$ – ${V}$ and ${G}$ – ${V}$ characteristics in all regimes of operation, n- and p-ambipolarity, the superlinear onset of the output characteristics, and the temperature dependence. Experimental calibration on long channel (350 nm) complementary n- and p-type sSi NW TFETs has been performed to create the model, which is used to systematically benchmark the main analog figures of merit at device level: ${g}_{m}/{I}_{\text {d}}$ , ${g}_{m}/{g}_{ds}$ , ${f}_{T}$ and ${f}_{T}/{I}_{d}{V}_{d}$ , and their temperature dependence from 25 °C to 125 °C. This allows for a direct comparison between 28-nm low-power Fully Depleted Silicon on Insulator (FD-SOI) CMOS node and 28-nm double-gate (DG) TFET. We demonstrate unique advantages of sSi DG TFET over CMOS, in terms of: 1) reduced temperature dependence of subthreshold swing; 2) higher transconductance per unit of current with peaks close to $40~\text {V}^{-1}$ , for currents lower than 10 nA/ $\mu \text{m}$ ; and 3) higher unity gain frequency per unit power for currents below 10 nA/ $\mu \text{m}$ . |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|