A review of the Z 2 -FET 1T-DRAM memory: Operation mechanisms and key parameters
| Autor: | Kyung Hwa Lee, H. El Dirani, Sorin Cristoloveanu, Mukta Singh Parihar, J.-Ch. Barbe, Jing Wan, Yong Tae Kim, X. Mescot, Sebastien Martinie, Yuan Taur, Francisco Gamiz, Pascal Fonteneau, Yong Xu, Ph. Galy, Binjie Cheng, M. Bawedin, M. Duan, C. Le Royer, Fikru Adamu-Lema, Carlos Navarro, Joris Lacord, Asen Asenov |
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| Přispěvatelé: | Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), Universidad de Granada = University of Granada (UGR), University of Glasgow, James Watt School of Engineering [Univ Glasgow], Department of Electrical and Computer Engineering [Univ California San Diego] (ECE - UC San Diego), University of California [San Diego] (UC San Diego), University of California (UC)-University of California (UC), Nanjing University of Posts and Telecommunications [Nanjing] (NJUPT), The Korean Institute of Science and Technology, Fudan University [Shanghai], European Project: 687931,H2020,H2020-ICT-2015,REMINDER(2016), University of Granada [Granada], Department of Electrical Engineering - University of California, University of California-University of California |
| Jazyk: | angličtina |
| Předmět: |
010302 applied physics
Hardware_MEMORYSTRUCTURES Computer science Silicon on insulator Embedded memory 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Margin (machine learning) 0103 physical sciences Materials Chemistry Key (cryptography) Electronic engineering Hardware_INTEGRATEDCIRCUITS High current Electrical and Electronic Engineering Operating voltage Current (fluid) [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 0210 nano-technology Dram memory |
| Zdroj: | Solid-State Electronics Solid-State Electronics, 2018, 143, pp.10-19. ⟨10.1016/j.sse.2017.11.012⟩ Solid-State Electronics, Elsevier, 2018, 143, pp.10-19. ⟨10.1016/j.sse.2017.11.012⟩ |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2017.11.012 |
| Popis: | International audience; The band-modulation and sharp-switching mechanisms in Z2-FET device operated as a capacitorless 1T-DRAM memory are reviewed. The main parameters that govern the memory performance are discussed based on detailed experiments and simulations. This 1T-DRAM memory does not suffer from super-coupling effect and can be integrated in sub-10 nm thick SOI films. It offers low leakage current, high current margin, long retention, low operating voltage especially for programming, and high speed. The Z2-FET is suitable for embedded memory applications. |
| Databáze: | OpenAIRE |
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