| Autor: |
Shich-Chuan Wu, Hao-Tien Daniel Lee, Tzu-I Tsai, Fuh-Cheng Jon, Wen-Ching Hsieh, Dawei Heh |
| Rok vydání: |
2016 |
| Předmět: |
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| Zdroj: |
MATEC Web of Conferences, Vol 71, p 05007 (2016) |
| ISSN: |
2261-236X |
| DOI: |
10.1051/matecconf/20167105007 |
| Popis: |
The Si-rich metal -oxide-nitride-oxide-silicon (hereafter Si-MONOS) can be candidates for non-volatile total ionization dose (TID) radiation sensors. In the case of Si-MONOS gamma radiation sensors, the gamma radiation induces a significant decrease of threshold voltage V T . The change of V T for Si-MONOS after gamma irradiation has a strong correlation to the TID of gamma ray exposure as well. The Si-MONOS capacitor device in this study has demonstrated the better feasibility for non-volatile TID radiation sensing in the future. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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