Power-efficient noise-Induced reduction of ReRAM cell’s temporal variability effects
| Autor: | Rosana Rodriguez, M. Pedro, Javier Martin-Martinez, Vasileios Ntinas, Antonio Rubio, Albert Crespo-Yepes, Montserrat Nafria, Emili Salvador Aguilera, Georgios Ch. Sirakoulis |
|---|---|
| Přispěvatelé: | Universitat Politècnica de Catalunya. Doctorat en Enginyeria Electrònica, Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Computer science
Stochastic resonance 02 engineering and technology Memristor 01 natural sciences Noise (electronics) law.invention Reduction (complexity) law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electronic engineering Ordinadors -- Dispositius de memòria Electrical and Electronic Engineering Variability 010302 applied physics Ordinadors -- Memòries semiconductores Emerging memories 020208 electrical & electronic engineering Dissipation Computer storage devices Resistive random-access memory Enginyeria electrònica::Microelectrònica [Àrees temàtiques de la UPC] Nonlinear system Bit error rate ReRAM devices Semiconductor storage devices |
| Zdroj: | UPCommons. Portal del coneixement obert de la UPC Universitat Politècnica de Catalunya (UPC) Dipòsit Digital de Documents de la UAB Universitat Autònoma de Barcelona |
| DOI: | 10.1109/TCSII.2020.3026950 |
| Popis: | Resistive Random Access Memory (ReRAM) is apromising novel memory technology for non-volatile storing, with low-power operation and ultra-high area density. However, ReRAM memories still face issues through commercialization, mainly owing to the fact that the high fabrication variations and the stochastic switching of the manufactured ReRAM devices cause high Bit Error Rate (BER). Given that ReRAM devices are nonlinear elements, the nonlinear phenomenon of Stochastic Resonance (SR), which defines that an input disturbance with specific characteristics can improve the total performance of the nonlinear system, is used to reduce the ReRAM cell’s BER. Thus, in this work, the BER of a single ReRAM cell is explored, using the Stanford PKU model, and is improved after the application of specific additive input noise. The power dissipation of the proposed approach is also evaluated and compared with the consideration of higher amplitude writing pulses in the lack of noise, showing that the proposed noiseinduced technique can decrease the BER without the excessive increase of the power dissipation. As a first step, towards the experimental verification of the proposed method, noise-induced measurements on a single fabricated ReRAM device are also performed. Overall, the presented results of the BER reduction with low power dissipation, reaching up to 3:26x less power consumption considering 100 ns writing pulses, are encouraging for ReRAM designers, delivering a circuit-level solution against the device-level problem. This work was supported in part by Spanish MICIU and MINECO under Projects TEC2016-75151-C3-R, TEC2017-90969-EXP and PID2019-103869RB-C3 and in part by FPI-UPC and partially supported by Greece-Russia bilateral joint research project MEM-Q (proj.no./MIS T4∆PΩ-00030/5021467) supported by GSRT, funded by National and European funds. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|