| Autor: |
Yasube Kashiwaba, C. Sudha Kartha, K.P. Vijayakumar, Angel Susan Cherian, Takami Abe |
| Rok vydání: |
2012 |
| Předmět: |
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| Zdroj: |
Energy Procedia. 15:283-290 |
| ISSN: |
1876-6102 |
| DOI: |
10.1016/j.egypro.2012.02.033 |
| Popis: |
Thin film solar cells having structure CuInS2/In2S3 were fabricated using chemical spray pyrolysis (CSP) technique over ITO coated glass. Top electrode was silver film (area 0.05 cm2). Cu/In ratio and S/Cu in the precursor solution for CuInS2 were fixed as 1.2 and 5 respectively. In/S ratio in the precursor solution for In2S3 was fixed as 1.2/8. An efficiency of 0.6% (fill factor -37.6%) was obtained. Cu diffusion to the In2S3 layer, which deteriorates junction properties, is inevitable in CuInS2/In2S3 cell. So to decrease this effect and to ensure a Cu-free In2S3 layer at the top of the cell, Cu/In ratio was reduced to 1. Then a remarkable increase in short circuit current density was occurred from 3 mA/cm2 to 14.8 mA/cm2 and an efficiency of 2.13% was achieved. Also when In/S ratio was altered to 1.2/12, the short circuit current density increased to 17.8 mA/cm2 with an improved fill factor of 32% and efficiency remaining as 2%. Thus Cu/In and In/S ratios in the precursor solutions play a crucial role in determining the cell parameters. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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