An immunosensor based on a high performance dual-gate oxide semiconductor thin-film transistor for rapid detection of SARS-CoV-2
| Autor: | Jingyu Kim, Sehun Jeong, Siracosit Sarawut, Haneul Kim, Seong Uk Son, Seungheon Lee, Gulam Rabbani, Hyunhwa Kwon, Eun-Kyung Lim, Saeyoung Nate Ahn, Sang-Hee Ko Park |
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| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | Lab on a Chip. 22:899-907 |
| ISSN: | 1473-0189 1473-0197 |
| DOI: | 10.1039/d1lc01116b |
| Popis: | Severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) is the agent of an infectious disease that has led the WHO to declare its highest level (6) pandemic. The coronavirus disease 2019 (COVID-19) has spread rapidly around the world, and the number of confirmed cases has passed 246 million as of November 2021. Therefore, precise and fast virus detection protocols need to be developed to cope with the rapid spread of the virus. Here, we present a high performance dual-gate oxide semiconductor thin-film transistor (TFT)-based immunosensor for detecting SARS-CoV-2. The immunosensor has an indium tin oxide sensing membrane to which the antibody against the SARS-CoV-2 spike S1 protein can be immobilized through functionalization. The dual-gate TFT was stable under ambient conditions with near-zero hysteresis; capacitive coupling yields a 10.14 ± 0.14-fold amplification of the surface charge potential on the sensing membrane and improves the pH sensitivity to 770.1 ± 37.74 mV pH |
| Databáze: | OpenAIRE |
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