Ag-catalyzed InAs nanowires grown on transferable graphite flakes
| Autor: | Thomas Kanne, Peter Krogstrup, Jakob Meyer-Holdt, Aske Nørskov Gejl, Jesper Nygård, Lunjie Zeng, Eva Olsson, Erik Johnson, Joachim E. Sestoft |
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| Rok vydání: | 2016 |
| Předmět: |
Nanostructure
Materials science Graphene Mechanical Engineering Nanowire Bioengineering Nanotechnology 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences 0104 chemical sciences law.invention Mechanics of Materials Transmission electron microscopy law General Materials Science Graphite Electrical and Electronic Engineering 0210 nano-technology Molecular beam epitaxy Stacking fault |
| Zdroj: | Nanotechnology. 27(36) |
| ISSN: | 1361-6528 |
| Popis: | Semiconducting nanowires grown by quasi-van-der-Waals epitaxy on graphite flakes are a new class of hybrid materials that hold promise for scalable nanostructured devices within opto-electronics. Here we report on high aspect ratio and stacking fault free Ag-seeded InAs nanowires grown on exfoliated graphite flakes by molecular beam epitaxy. Ag catalyzes the InAs nanowire growth selectively on the graphite flakes and not on the underlying InAs substrates. This allows for easy transfer of the flexible graphite flakes with as-grown nanowire ensembles to arbitrary substrates by a micro-needle manipulator. Besides the possibilities for fabricating novel nanostructure device designs, we show how this method is used to study the parasitic growth and bicrystal match between the graphite flake and the nanowires by transmission electron microscopy. |
| Databáze: | OpenAIRE |
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