New electron and hole traps in GaAsP alloy

Autor:	Y. T. Lim, C. H. Goo, W. S. Lau, Ming-Fu Li, Kie Leong Teo
Rok vydání:	1997
Předmět:	chemistry.chemical_compound Materials science Deep-level transient spectroscopy chemistry Ternary compound Phase (matter) Gallium phosphide Electron Activation energy Electrical and Electronic Engineering Atomic physics Epitaxy Penning trap
Zdroj:	Scopus-Elsevier
ISSN:	1362-3060 0020-7217
DOI:	10.1080/002072197135616
Popis:	Two electron traps and a hole trap have been observed in vapour phase epitaxial GaAs0.6P0.4 materials by deep level transient spectroscopy. The dominant electron trap A, which has never previously been reported, has a thermal emission activation energy of Ee A = 0.83 eV and an abnormally large capture activation e energy Ec A = 0.73 eV. Hole trap C with thermal emission activation energy of Ee C = 0.65 eV is also new and different from previous reports. A critical comparison of traps reported in this work with traps reported in the existing literature is also made.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::45547cfb71c96d86ff892c368656f45f https://doi.org/10.1080/002072197135616 Zobrazit plný text záznamu