Synthesis, structure determination and electrical properties of beta-K0.399V2.623W0.377O7.5 with mixed occupation of vanadium and tungsten elements
| Autor: | D. Mezaoui, Olivier Perez, S. Belkhiri |
|---|---|
| Přispěvatelé: | Université des Sciences et de la Technologie Houari Boumediene = University of Sciences and Technology Houari Boumediene [Alger] (USTHB), Laboratoire de cristallographie et sciences des matériaux (CRISMAT), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université des Sciences et de la Technologie Houari Boumediene [Alger] (USTHB), École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Institut de Chimie du CNRS (INC) |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Double bond Vanadium chemistry.chemical_element 02 engineering and technology Tungsten 010402 general chemistry 01 natural sciences [CHIM.CRIS]Chemical Sciences/Cristallography [CHIM]Chemical Sciences General Materials Science Isostructural Structure determination chemistry.chemical_classification Vanado-tungsto oxide Mechanical Engineering Metallurgy Semiconductor [CHIM.MATE]Chemical Sciences/Material chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Bannermanite [CHIM.THEO]Chemical Sciences/Theoretical and/or physical chemistry Crystallography chemistry Octahedron Mechanics of Materials Square pyramid Crystal growth 0210 nano-technology Single crystal Monoclinic crystal system |
| Zdroj: | Materials Science in Semiconductor Processing Materials Science in Semiconductor Processing, 2017, 63, pp.161-168. ⟨10.1016/j.mssp.2017.02.014⟩ Materials Science in Semiconductor Processing, Elsevier, 2017, 63, pp.161-168. ⟨10.1016/j.mssp.2017.02.014⟩ |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2017.02.014⟩ |
| Popis: | International audience; The title compound vanadium-tungsten mixed oxide bronze K0.399V2.623W0.377O7.5 was prepared by solid state reaction at 700 degrees C in an evacuated silica ampoule. The single crystal K0.399V2.623W0.377O7.5 crystallizes in the monoclinic system, C-2/m (no12) space group, with cell parameters a =15.7123 (3) angstrom, b =3.6796 (6) angstrom, c =10.2092 (2) angstrom and beta=108.994 degrees (4).This phase is isostructural to beta-KxV2O5 called Bannermanite family with x ranging between 0.19 and 0.4. The structure determination shows that the framework consists of tunnels which are created by the junction of two kind of connection by the edge and the corners of VO5 square pyramid and (VO6, MO6) octahedra. The "M" metal site is statistically occupied by 62.3% of vanadium and 37.7% of tungsten. The vanadium atoms are observed in irregular octahedra forming a short bond (1.6-1.67 angstrom) related to the double bond character ((VO)-O-=)). The structure refinement led to reliability factors R=0.046, R-w=0.0377 and GOF = 1.23. According to the calculated values of the activation energy, the electrical conductivity measurement as function of various temperatures ranging (between 400 and 625 K) and frequency (100-10(5) Hz) shows a semiconductor behavior for K0.399V2.623W0.377O7.5. |
| Databáze: | OpenAIRE |
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