Operando SXRD of E-ALD deposited sulphides ultra-thin films: Crystallite strain and size
| Autor: | Giaccherini A.[1], Russo F.[1], Carlà F.[2], Guerri A.[1], Picca R.[3], Cioffi N.[3], Cinotti S.[1], Montegrossi G.[4], Passaponti M.[1], Di Benedetto F.[3, Felici R.[6], Innocenti M. [1] |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Band gap E-ALD General Physics and Astronomy 02 engineering and technology Substrate (electronics) 010402 general chemistry Epitaxy 01 natural sciences Atomic layer deposition Phase (matter) SXRD Thin film Water-splitting Ambientale ECALE Ultra-thin films Surfaces and Interfaces General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Surfaces Coatings and Films Photovoltaics Crystallography Crystallite 0210 nano-technology Single crystal |
| Zdroj: | Applied surface science 432 (2018): 53–59. doi:10.1016/j.apsusc.2017.07.294 info:cnr-pdr/source/autori:Giaccherini A.[1], Russo F.[1], Carlà F.[2], Guerri A.[1], Picca R.[3], Cioffi N.[3], Cinotti S.[1], Montegrossi G.[4], Passaponti M.[1], Di Benedetto F.[3,4], Felici R.[6], Innocenti M. [1]/titolo:Operando SXRD of E-ALD deposited sulphides ultra-thin films: Crystallite strain and size/doi:10.1016%2Fj.apsusc.2017.07.294/rivista:Applied surface science/anno:2018/pagina_da:53/pagina_a:59/intervallo_pagine:53–59/volume:432 |
| ISSN: | 0169-4332 |
| Popis: | Electrochemical Atomic Layer Deposition (E-ALD), exploiting surface limited electrodeposition of atomic layers, can easily grow highly ordered ultra-thin films and 2D structures. Among other compounds Cu x Zn y S grown by means of E-ALD on Ag(111) has been found particularly suitable for the solar energy conversion due to its band gap (1.61 eV). However its growth seems to be characterized by a micrometric thread-like structure, probably overgrowing a smooth ultra-thin films. On this ground, a SXRD investigation has been performed, to address the open questions about the structure and the growth of Cu x Zn y S by means of E-ALD. The experiment shows a pseudo single crystal pattern as well as a powder pattern, confirming that part of the sample grows epitaxially on the Ag(111) substrate. The growth of the film was monitored by following the evolution of the Bragg peaks and Debye rings during the E-ALD steps. Breadth and profile analysis of the Bragg peaks lead to a qualitative interpretation of the growth mechanism. This study confirms that Zn lead to the growth of a strained Cu 2 S-like structure, while the growth of the thread-like structure is probably driven by the release of the stress from the epitaxial phase. |
| Databáze: | OpenAIRE |
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