Impact of Al Pre-Deposition Layer on Crystalline Quality of GaN Grown on Si(111) Substrates
| Autor: | Jie Su, Jin-Woo Ju, Jong Hyeob Baek, Dong Soo Lee, Seong-Ran Jeon, Soo Min Lee, Cheul-Ro Lee, Seung-Jae Lee |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Morphology (linguistics) Biomedical Engineering Pre deposition Bioengineering General Chemistry Substrate (electronics) Chemical vapor deposition Condensed Matter Physics Crystal Metal Chemical engineering visual_art visual_art.visual_art_medium General Materials Science Metalorganic vapour phase epitaxy Layer (electronics) |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 19:892-896 |
| ISSN: | 1533-4880 |
| Popis: | The effects of Al metal pre-deposition under different conditions on GaN grown on Si(111) substrates by metal-organic chemical vapor deposition (MOCVD) have been investigated. Al pre-deposition improves surface morphology and crystal quality of GaN grown on Si. The surface morphology of Al pre-deposition layer, AlN, and GaN vary depending on Al pre-deposition temperature. With the increase of Al pre-deposition temperature, Al cluster size is observed to increase in the Al predeposition layer due to increased lateral mobility of Al atoms. The Al pre-deposition carried out at about 750 °C enables to grow pit-free GaN layer on Si(111) substrate. |
| Databáze: | OpenAIRE |
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