Surface properties of AlInGaN/GaN heterostructure
| Autor: | Michael Kneissl, Michael Heuken, Daniela Cavalcoli, Patrick Vogt, Albert Minj, C. Giesen, Ana Cros, D. Skuridina |
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| Přispěvatelé: | Minj, A, Skuridina, D., Cavalcoli, D., Cros, A., Vogt, P., Kneissl, M., Giesen, C., Heuken, M. |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
chemistry.chemical_element Condensed Matter Physic 02 engineering and technology Kelvin probe force microscopy 01 natural sciences Oxygen law.invention Barrier layer law 0103 physical sciences Microscopy Mechanics of Material General Materials Science Scanning tunneling microscopy Spectroscopy 010302 applied physics V-defect business.industry Mechanical Engineering Heterojunction AlInGaN/GaN Ciència dels materials 021001 nanoscience & nanotechnology Condensed Matter Physics Microscòpia chemistry Mechanics of Materials Chemisorption Optoelectronics Materials Science (all) Scanning tunneling microscope 0210 nano-technology business Volta potential |
| Zdroj: | Minj, Albert Skuridina, D. Cavalcoli, D. Cros Stotter, Ana Vogt, P. Kneissl, M. 2016 Surface properties of AlInGaN/GaN heterostructure Materials Science in Semiconductor Processing 55 26 31 RODERIC. Repositorio Institucional de la Universitat de Valéncia instname |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2016.04.005 |
| Popis: | Surface structural, electronic and electrical properties of the quaternary alloy AlInGaN/GaN heterostructures are investigated. Surface termination, atomic arrangement, electronic and electrical properties of the (0001) surface and (10–11) V-defect facets have been experimentally analyzed using various surface sensitive techniques including spectroscopy and microscopy. Moreover, the effect of sub-band gap (of the barrier layer) illumination on contact potential difference (VCPD) and the role of oxygen chemisorption have been studied. |
| Databáze: | OpenAIRE |
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