Autor: |
Prasad, S.J., Haynes, C., Vetanen, B., Beers, I., Park, S. |
Jazyk: |
italština |
Rok vydání: |
1994 |
Předmět: |
|
Zdroj: |
Prasad, S.J. ; Haynes, C. ; Vetanen, B. ; Beers, I. ; Park, S. (1994) A 12.5 GHz divide-by-eight prescaler in GaInP/GaAs HBT technology. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy. |
Popis: |
A fully integrated pre-amplifier and a static divide-by-eight prescaler clocking at 12.5GHz realized in a GaInP/GaAs HBT technology is presented. The HBT process incorporates Schottky diodes, nichrome resistors, MIM capacitors and air-bridge inductors. HBTs with emitter size of 3? x 10?. have current gains of 145 and fT and fmaxof 60GHz and 45GHz respectively. Unloaded ECL gate delays of 28ps are obtained from ring oscillator measurements. |
Databáze: |
OpenAIRE |
Externí odkaz: |
|