Effect of a buffer layer in the epi-substrate region to boost the avalanche capability of a 100V Schottky diode
| Autor: | Luigi Merlin, Diego Raffo, Paolo Spirito, Andrea Irace, Giovanni Breglio, A. Bricconi |
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| Přispěvatelé: | Irace, Andrea, Breglio, Giovanni, Spirito, Paolo, A., Bricconi, D., Raffo, L., Merlin |
| Rok vydání: | 2006 |
| Předmět: |
Avalanche diode
Materials science business.industry Schottky diode Substrate (electronics) Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Power (physics) Safe operating area Single-photon avalanche diode Optoelectronics Electrical and Electronic Engineering Safety Risk Reliability and Quality business Layer (electronics) Energy (signal processing) |
| Zdroj: | Microelectronics Reliability. 46:1784-1789 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2006.07.060 |
| Popis: | The aim of this paper is to give an insight and a possible explanation of the limitations in the Reverse Bias Safe Operating Area of 100 V Si Power Schottky Diodes. Starting from experiments and going through device simulations and theory a physical explanation of device failure both in short (i.e. isothermal) and long pulse are explained. With the help of the theoretical analysis an improvement of the design is proposed to increase avalanche capability of these devices and preliminary experimental data are reporting a very promising increase of both the maximum sustainable current in avalanche condition and the maximum sustainable avalanche energy in UIS conditions. |
| Databáze: | OpenAIRE |
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