High-energy proton irradiation damage on two-dimensional hexagonal boron nitride
| Autor: | Dongryul Lee, Jihyun Kim, Sanghyuk Yoo, Hyunik Park, Jinho Bae, Keonwook Kang |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Proton Silicon dioxide business.industry General Chemical Engineering 02 engineering and technology General Chemistry Dielectric 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention Capacitor chemistry.chemical_compound Molecular dynamics chemistry law Thermal Optoelectronics Irradiation 0210 nano-technology business Leakage (electronics) |
| Zdroj: | RSC Advances. 9:18326-18332 |
| ISSN: | 2046-2069 |
| Popis: | The dielectric layer, which is an essential building block in electronic device circuitry, is subject to intrinsic or induced defects that limit its performance. Nano-layers of hexagonal boron nitride (h-BN) represent a promising dielectric layer in nano-electronics owing to its excellent electronic and thermal properties. In order to further analyze this technology, two-dimensional (2D) h-BN dielectric layers were exposed to high-energy proton irradiation at various proton energies and doses to intentionally introduce defective sites. A pristine h-BN capacitor showed typical degradation stages with a hard breakdown field of 10.3 MV cm−1, while h-BN capacitors irradiated at proton energies of 5 and 10 MeV at a dose of 1 × 1013 cm−2 showed lower hard breakdown fields of 1.6 and 8.3 MV cm−1, respectively. Higher leakage currents were observed under higher proton doses at 5 × 1013 cm−2, resulting in lower breakdown fields. The degradation stages of proton-irradiated h-BN are similar to those of defective silicon dioxide. The degradation of the h-BN dielectric after proton irradiation is attributed to Frenkel defects created by the high-energy protons, as indicated by the molecular dynamics simulation. Understanding the defect-induced degradation mechanism of h-BN nano-layers can improve their reliability, paving the way to the implementation of 2D h-BN in advanced micro- and nano-electronics. |
| Databáze: | OpenAIRE |
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