Decreased hydrogen content in diamond-like carbon grown by CH4/Ar photoemission-assisted plasma chemical vapor deposition with CO2 gas
| Autor: | Shuichi Ogawa, Rintaro Sugimoto, Yuji Takakuwa, Nobuhisa Kamata |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Diamond-like carbon Radical Analytical chemistry chemistry.chemical_element 02 engineering and technology Surfaces and Interfaces General Chemistry Chemical vapor deposition 021001 nanoscience & nanotechnology Condensed Matter Physics Mass spectrometry 01 natural sciences Surfaces Coatings and Films symbols.namesake X-ray photoelectron spectroscopy chemistry Plasma-enhanced chemical vapor deposition 0103 physical sciences Materials Chemistry symbols 0210 nano-technology Raman spectroscopy Carbon |
| Zdroj: | Surface and Coatings Technology. 350:863-867 |
| ISSN: | 0257-8972 |
| Popis: | In this study, we tried to decrease the hydrogen content in diamond-like carbon (DLC) grown by photoemission-assisted plasma enhanced chemical vapor deposition (PA-PECVD) using Ar/CH4 mixed with CO2. When the CO2 flux was changed from 0 to 10 sccm with the Ar and CH4 fluxes maintained at 50 and 10 sccm, respectively, the growth rate decreased from 11 to 3 μm/h. Secondary mass spectroscopy measurements confirmed that the amount of O mixed into the DLC was increased through incorporation of CO2 into feed gas flow. The O concentration in the DLC was quantitatively evaluated by X-ray photoelectron spectroscopy (XPS) to be 0.6 atomic % at a CO2 flow ratio of 14%. Raman spectroscopy and XPS revealed that the amount of H trapped in the DLC decreased as the CO2 flow ratio was increased and the sp3/sp2 ratio remained almost unchanged. These results were interpreted by a model involving O radicals acting on the DLC surface associated with CO/CO2 and H2O, resulting in a decrease of the growth rate and H content. A portion of the O radicals also became incorporated into the DLC as C O C bonds. |
| Databáze: | OpenAIRE |
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