Fabrication of Nanocrystalline Silicon Thin Films Utilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation
| Autor: | H. A. Othman, Abd El-Hady B. Kashyout, Lobna M. Sharaf El-Deen, Mohamed A. Nawwar, Magdy S. Abo Ghazala |
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| Rok vydání: | 2020 |
| Předmět: |
Amorphous silicon
Materials science Fabrication business.industry Thermal vacuum evaporation General Chemical Engineering Nanocrystalline silicon Crystal growth General Chemistry Article law.invention Chemistry chemistry.chemical_compound chemistry law Optoelectronics Crystallization Thin film business QD1-999 |
| Zdroj: | ACS Omega, Vol 5, Iss 42, Pp 27633-27644 (2020) ACS Omega |
| ISSN: | 2470-1343 |
| DOI: | 10.1021/acsomega.0c04206 |
| Popis: | Metal-induced crystallization of amorphous silicon is a promising technique for developing high-quality and cheap optoelectronic devices. Many attempts tried to enhance the crystal growth of polycrystalline silicon via aluminum-induced crystallization at different annealing times and temperatures. In this research, thin films of aluminum/silicon (Al/Si) and aluminum/silicon/tin (Al/Si/Sn) layers were fabricated using the thermal evaporation technique with a designed wire tungsten boat. MIC of a:Si was detected at annealing temperature of 500 °C using X-ray diffraction, Raman spectroscopy, and field emission scanning electron microscopy. The crystallinity of the films is enhanced by increasing the annealing time. In the three-layer thin films, MIC occurs because of the existence of both Al and Sn metals forming highly oriented (111) silicon. Nanocrystalline silicon with dimensions ranged from 5 to 300 nm is produced depending on the structure and time duration. Low surface reflection and the variation of the optical energy gap were detected using UV-vis spectroscopy. Higher conductivities of Al/Si/Sn films than Al/Si films were observed because of the presence of both metals. Highly rectifying ideal diode manufactured from Al/Si/Sn on the FTO layer annealed for 24 h indicates that this device has a great opportunity for the optoelectronic device applications. |
| Databáze: | OpenAIRE |
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