| Autor: |
Dominique Schreurs, Giovanni Crupi, Bart Nauwelaers, Gustavo Avolio, Seyed Majid Homayouni |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
2010 Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits. |
| DOI: |
10.1109/inmmic.2010.5480106 |
| Popis: |
A comparison between two different, yet analytical approaches for lookup-table large-signal model construction is presented in this study. Both approaches use the same linear (small-signal) model as the starting point to construct the large-signal model. The first nonlinear model employs the charge- and current-sources to represent the nonlinearity of the active part of the device where the extended charge- and current-sources are added to compensate for the non-quasi-static (NQS) effects at mm-wave frequencies. The second nonlinear model employs the small-signal model schematic and adapts it to be used directly for large-signal simulations. The study was performed on SOI multi-Fin MOSFET transistors. Both modeling approaches can reproduce the device behavior at microwave and mm-wave frequencies and under highly nonlinear conditions with good accuracy. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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