3C–SiC Heteroepitaxial Growth by Vapor–Liquid–Solid Mechanism on Patterned 4H–SiC Substrate Using Si–Ge Melt
| Autor: | Dominique Tournier, Davy Carole, Mihai Lazar, Nikoletta Jegenyes, François Cauwet, Gabriel Ferro, Jean Lorenzzi |
|---|---|
| Přispěvatelé: | Laboratoire des Multimatériaux et Interfaces (LMI), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE) |
| Rok vydání: | 2011 |
| Předmět: |
010302 applied physics
Chemistry Nanotechnology 02 engineering and technology General Chemistry Chemical vapor deposition Atmospheric temperature range 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences [SPI.TRON]Engineering Sciences [physics]/Electronics law.invention law Sic substrate 0103 physical sciences General Materials Science Vapor liquid Dry etching Growth rate Vapor–liquid–solid method Photolithography Composite material 0210 nano-technology |
| Zdroj: | Crystal Growth & Design Crystal Growth & Design, American Chemical Society, 2011, 11 (6), pp.2177-2182. ⟨10.1021/cg101487g⟩ |
| ISSN: | 1528-7505 1528-7483 1300-1450 |
| DOI: | 10.1021/cg101487g |
| Popis: | International audience; In this work, we report on the use of patterned 4H-SiC(0001) substrates for the heteroepitaxial growth of 3C-SiC by vapor-liquid-solid (VLS) mechanism using Ge(50)Si(50) melt. Mesas structures of various size and shape were obtained by standard photolithography and dry etching processes. On the temperature range investigated 1300-1450 degrees C, 3C-SiC deposit was obtained on top and outside the mesas. Some lateral enlargement of these mesas was observed, but it was systematically homoepitaxial. The lateral growth rate was found rather low compared to other techniques like chemical vapor deposition, with a maximum value of similar to 12 mu m/h. In addition, elimination of twin boundaries (TBs) inside the 3C-SiC deposit on top of the mesas was observed in the temperature range of 1400-1450 degrees C and for specific mesa shape or orientation of the sidewalls. The best case for eliminating these TBs was found to be with initially circular mesas, which spontaneously form well orientated hexagonal facets and then lead to TB-free deposit on top after VLS growth. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|