Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon
| Autor: | Patrick J. McNally, A.N. Danilewsky, E. Gorostegui-Colinas, J. Wittge, M. Reyes Elizalde, J. Garagorri, David Allen, Brian K. Tanner |
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| Přispěvatelé: | FP7-ICT-216382, European Community FP7 STREP project SIDAM |
| Rok vydání: | 2017 |
| Předmět: |
plastic deformation
Diffraction Materials science Silicon Annealing (metallurgy) General Chemical Engineering chemistry.chemical_element X-ray diffraction imaging 02 engineering and technology 01 natural sciences Inorganic Chemistry plastic deformation strain imaging symbols.namesake indentation geometry Optics healthCORE - IT Carlow Indentation 0103 physical sciences lcsh:QD901-999 General Materials Science Composite material 010302 applied physics Raman spectroscopy crack generation business.industry Stress–strain curve 021001 nanoscience & nanotechnology Condensed Matter Physics Bevel surfaces _coatings_films chemistry symbols Millimeter lcsh:Crystallography 0210 nano-technology business |
| Zdroj: | Crystals, Vol 7, Iss 11, p 347 (2017) Crystals; Volume 7; Issue 11; Pages: 347 Crystals, 2017, Vol.7(11), pp.347 [Peer Reviewed Journal] |
| DOI: | 10.20944/preprints201710.0061.v1 |
| Popis: | The crack geometry and associated strain field around Berkovich and Vickers indents on silicon have been studied by X-ray diffraction imaging and micro-Raman spectroscopy scanning. The techniques are complementary, the Raman data coming from within a few micrometers of the indentation, whereas the X-ray image probes the strain field at a distance of typically tens of micrometers. For example, Raman data provides an explanation for the central contrast feature in the X-ray images of an indent. Strain relaxation from breakout and high temperature annealing are examined and it is demonstrated that millimeter length cracks, similar to those produced by mechanical damage from misaligned handling tools, can be generated in a controlled fashion by indentation within 75 micrometers of the bevel edge of 200mm diameter wafers. |
| Databáze: | OpenAIRE |
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