Evaluation of the single-frequency operation of a short vertical external-cavity semiconductor laser at 852 nm
| Autor: | Isabelle Sagnes, Arnaud Garnache, Fabiola Camargo, Gaëlle Lucas-Leclin, Patrick Georges, Sylvie Janicot |
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| Přispěvatelé: | Laboratoire Charles Fabry / Lasers, Laboratoire Charles Fabry (LCF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), RTRA/Triangle de la Physique (2010-089T) |
| Rok vydání: | 2012 |
| Předmět: |
Materials science
Thermal lens Physics::Optics 02 engineering and technology Output coupler VECSEL Single-frequency 01 natural sciences law.invention Semiconductor laser theory 010309 optics 020210 optoelectronics & photonics Optics law 0103 physical sciences Thermal 0202 electrical engineering electronic engineering information engineering Semiconductor lasers [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics] Plane (geometry) business.industry Laser Lens (optics) Semiconductor Transmission (telecommunications) Physics::Accelerator Physics Optoelectronics business |
| Zdroj: | LASE-Vertical External Cavity Surface Emitting Lasers (VECSELs)II LASE-Vertical External Cavity Surface Emitting Lasers (VECSELs)II, Jan 2012, San Francisco, United States. pp.82420F, ⟨10.1117/12.908738⟩ |
| ISSN: | 0277-786X |
| DOI: | 10.1117/12.908738 |
| Popis: | International audience; We present in this work the study of a short vertical external cavity semiconductor laser in single longitudinal operation at 852 nm without intracavity elements. Two different configurations were studied, a plane-plane configuration, stabilized by the thermal lens and a plane-concave configuration. The influence of the output coupler transmission and the thermal lens has been studied. In the plane concave configuration we have demonstrated more than 100mW in stable single frequency operation using a very compact cavity emitting around 852 nm. |
| Databáze: | OpenAIRE |
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