Implications of TCO Topography on Intermediate Reflector Design for a-Si/μc-Si Tandem Solar Cells—Experiments and Rigorous Optical Simulations
| Autor: | Martin Hammerschmidt, Bernd Rech, Simon Kirner, Daniel Lockau, Andreas Schöpke, Tim Frijnts, Rutger Schlatmann, Christoph Schwanke, Bernd Stannowski, Sebastian Neubert, Andreas Heidelberg, Jens-Hendrik Zollondz, Sonya Calnan, Frank Schmidt |
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| Rok vydání: | 2014 |
| Předmět: |
Amorphous semiconductors
Materials science Tandem Silicon business.industry Renewable energies Oxide chemistry.chemical_element Reflector (antenna) Condensed Matter Physics Electronic Optical and Magnetic Materials Optical modeling chemistry.chemical_compound Optics chemistry Electrical and Electronic Engineering business Silicon oxide Layer (electronics) |
| Zdroj: | IEEE Journal of Photovoltaics. 4:10-15 |
| ISSN: | 2156-3403 2156-3381 |
| Popis: | The influence of the transparent conducting oxide (TCO) topography was studied on the performance of a silicon oxide intermediate reflector layer (IRL) in a-Si/μc-Si tandem cells, both experimentally and by 3-D optical simulations. Therefore, cells with varying IRL thickness were deposited on three different types of TCOs. Clear differences were observed regarding the performance of the IRL as well as its ideal thickness, both experimentally and in the simulations. Optical modeling suggests that a small autocorrelation length is essential for a good performance. Design rules for both the TCO topography and the IRL thickness can be derived from this interplay. |
| Databáze: | OpenAIRE |
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