Reduced Operation Current of Oxygen-Doped ZrN Based Resistive Switching Memory Devices Fabricated by the Radio Frequency Sputtering Method
| Autor: | Hee-Dong Kim, Jinsu Jung, Sungho Kim, Dongjoo Bae |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
oxygen dopping
Materials science business.industry ZrN films Doping chemistry.chemical_element Surfaces and Interfaces Zirconium nitride Surfaces Coatings and Films chemistry.chemical_compound Platinum silicide Reliability (semiconductor) chemistry Sputtering lcsh:TA1-2040 Electrode Materials Chemistry Optoelectronics business Platinum platium silicide lcsh:Engineering (General). Civil engineering (General) Voltage |
| Zdroj: | Coatings, Vol 11, Iss 197, p 197 (2021) Coatings Volume 11 Issue 2 |
| ISSN: | 2079-6412 |
| Popis: | In this work, we report the feasibility of resistive switching (RS) properties of oxygen-doped zirconium nitride (O-doped ZrN) films with platinum (Pt) and platinum silicide (PtSi) bottom electrode (BE), produced by a sputtering method. Compared to O-doped ZrN using Pt BE, when Pt/p-Si was used as BE, the foaming voltage slightly increased, but the operation current was reduced by about two orders. In particular, the average reset current of the O-doped ZrN memory cells was reduced to 50 µA, which can delay deterioration of the element, and reduces power consumption. Therefore, the use of PtSi as the BE of the O-doped ZrN films is considered highly effective in improving reliability through reduction of operating current of the memory cells. |
| Databáze: | OpenAIRE |
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