Oxygen isotopic exchange occurring during dry thermal oxidation of 6H SiC
| Autor: | Edit Szilágyi, Gábor Battistig, Ian Vickridge, Isabelle Trimaille, J.-J. Ganem, D. Tromson |
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| Přispěvatelé: | Groupe de Physique des Solides (GPS), Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2002 |
| Předmět: |
Isotopic tracing wide band gap semiconductors
Nuclear and High Energy Physics Band gap Inorganic chemistry Oxide Analytical chemistry chemistry.chemical_element Crystal growth Silicon carbide 02 engineering and technology 7. Clean energy 01 natural sciences Oxygen chemistry.chemical_compound Oxidation mechanisms 0103 physical sciences Compounds of carbon PACS classification codes: 81.65.Mq 82.80.Yc Instrumentation 010302 applied physics Thermal oxidation chemistry.chemical_classification business.industry 021001 nanoscience & nanotechnology Semiconductor chemistry 0210 nano-technology business |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2002, 190, pp.574. ⟨10.1016/S0168-583X(01)01303-9⟩ Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002, 190, pp.574. ⟨10.1016/S0168-583X(01)01303-9⟩ |
| ISSN: | 0168-583X |
| Popis: | SiC is a large band gap semiconductor, promising for high power and high frequency devices. The thermal oxide is SiO2 however the growth rates of thermal oxide on SiC are substantially slower than on Si, and different along the polar directions ( 〈0 0 0 1 〉 and 〈0 0 0 1〉 in the hexagonal polytypes). Thorough understanding of the oxide growth mechanisms may give us new insights into the nature of the SiO2/SiC interface, crucial for device applications. We have determined growth kinetics for ultra-dry thermal oxidation of 6H SiC at 1100 °C for pressures from 3 to 200 mbar. At 3 mbar, the lowest pressure studied, the oxide growth rates along the two polar directions are virtually the same. At higher pressures growth is faster on the carbon-terminated (0 0 0 1 ) face. After consecutive oxidations at 1100 °C and 100 mbar in 18 O2 and 16 O2 gases, 18 O depth profiles show significant isotopic exchange and oxygen movement within the oxide during oxidation. |
| Databáze: | OpenAIRE |
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