Heteroepitaxial Growth of Two-Dimensional Hexagonal Boron Nitride Templated by Graphene Edges

Autor:	Gong Gu, Wan Deng, Leonardo Basile, An-Ping Li, Lei Liu, Juan Carlos Idrobo, Jewook Park, Kevin F. McCarty, Kendal Clark, David Siegel
Rok vydání:	2014
Předmět:	Multidisciplinary Condensed matter physics Graphene law Lattice (order) Monolayer Atomic lattice Heterojunction Hexagonal boron nitride Nanotechnology Epitaxy Monolayer graphene law.invention
Zdroj:	Science. 343:163-167
ISSN:	1095-9203 0036-8075
Popis:	Heteroepitaxy Writ Thin A common method for creating a thin single-crystal layer of a semiconductor for use in an electronic device is heteroepitaxy—growing the layer on the face of a single crystal of a different material that acts as a template for assembly. Liu et al. (p. 163 ) now describe a similar process in which the edge of a graphene layer that was grown on a copper surface directs the assembly of a monolayer of hexagonal boron nitride. The boron nitride grew from inside edge of holes created in the graphene layer. The interface and the relative orientation of the two layers were determined by a variety of scanning microscopy and surface diffraction techniques.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4427535fa3c47fdcb4261892c973d26a https://doi.org/10.1126/science.1246137 Zobrazit plný text záznamu Plný text ve formátu PDF