Electrical Properties of Low-Temperature Processed Sn-Doped In2O3 Thin Films: The Role of Microstructure and Oxygen Content and the Potential of Defect Modulation Doping

Autor: Hervé Roussel, Getnet K. Deyu, Joachim Brötz, Andreas Klein, Jonas Hunka, Daniel Bellet
Přispěvatelé: Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Fachbereich Material- und Geowissenschaften, Technische Universität Darmstadt (TU Darmstadt), Fachbereich Material­ und Geowissenschaften
Jazyk: angličtina
Rok vydání: 2019
Předmět:
Materials science
Annealing (metallurgy)
chemistry.chemical_element
02 engineering and technology
01 natural sciences
Oxygen
lcsh:Technology
symbols.namesake
Atomic layer deposition
Crystallinity
0103 physical sciences
General Materials Science
low-temperature-deposition
Thin film
lcsh:Microscopy
doping limits
ComputingMilieux_MISCELLANEOUS
lcsh:QC120-168.85
010302 applied physics
lcsh:QH201-278.5
lcsh:T
Doping
Fermi level
[CHIM.MATE]Chemical Sciences/Material chemistry
021001 nanoscience & nanotechnology
modulation doping
Grain growth
thickness dependence
surfaces
_coatings_films
Chemical engineering
chemistry
lcsh:TA1-2040
electrical properties
symbols
lcsh:Descriptive and experimental mechanics
lcsh:Electrical engineering. Electronics. Nuclear engineering
0210 nano-technology
lcsh:Engineering (General). Civil engineering (General)
lcsh:TK1-9971
ITO
Zdroj: Materials, Vol 12, Iss 14, p 2232 (2019)
Materials
Volume 12
Issue 14
Materials, MDPI, 2019, 12 (14), pp.2232. ⟨10.3390/ma12142232⟩
ISSN: 1996-1944
DOI: 10.3390/ma12142232⟩
Popis: Low-temperature-processed ITO thin films offer the potential of overcoming the doping limit by suppressing the equilibrium of compensating oxygen interstitial defects. To elucidate this potential, electrical properties of Sn-doped In 2 O 3 (ITO) thin films are studied in dependence on film thickness. In-operando conductivity and Hall effect measurements during annealing of room-temperature-deposited films, together with different film thickness in different environments, allow to discriminate between the effects of crystallization, grain growth, donor activation and oxygen diffusion on carrier concentrations and mobilities. At 200 ∘ C , a control of carrier concentration by oxygen incorporation or extraction is only dominant for very thin films. The electrical properties of thicker films deposited at room temperature are mostly affected by the grain size. The remaining diffusivity of compensating oxygen defects at 200 ∘ C is sufficient to screen the high Fermi level induced by deposition of Al 2 O 3 using atomic layer deposition (ALD), which disables the use of defect modulation doping at this temperature. The results indicate that achieving higher carrier concentrations in ITO thin films requires a control of the oxygen pressure during deposition in combination with seed layers to enhance crystallinity or the use of near room temperature ALD.
Databáze: OpenAIRE
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