A new metal transfer process for van der Waals contacts to vertical Schottky-junction transition metal dichalcogenide photovoltaics
| Autor: | Cora M. Went, Abigail Carbone, Joeson Wong, Michael D. Kelzenberg, Phillip Jahelka, Harry A. Atwater, Matthew S. Hunt, Souvik Biswas |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Schottky barrier 02 engineering and technology 010402 general chemistry 7. Clean energy 01 natural sciences symbols.namesake Engineering Transition metal Photovoltaics Work function Lithography Research Articles Power density Applied Physics Resistive touchscreen Multidisciplinary business.industry SciAdv r-articles 021001 nanoscience & nanotechnology 0104 chemical sciences symbols Optoelectronics van der Waals force 0210 nano-technology business Research Article |
| Zdroj: | Science Advances |
| ISSN: | 2375-2548 |
| Popis: | We develop a new technique for transferring metal contacts to create ultrathin solar cells from 2D materials. Two-dimensional transition metal dichalcogenides are promising candidates for ultrathin optoelectronic devices due to their high absorption coefficients and intrinsically passivated surfaces. To maintain these near-perfect surfaces, recent research has focused on fabricating contacts that limit Fermi-level pinning at the metal-semiconductor interface. Here, we develop a new, simple procedure for transferring metal contacts that does not require aligned lithography. Using this technique, we fabricate vertical Schottky-junction WS2 solar cells, with Ag and Au as asymmetric work function contacts. Under laser illumination, we observe rectifying behavior and open-circuit voltage above 500 mV in devices with transferred contacts, in contrast to resistive behavior and open-circuit voltage below 15 mV in devices with evaporated contacts. One-sun measurements and device simulation results indicate that this metal transfer process could enable high specific power vertical Schottky-junction transition metal dichalcogenide photovoltaics, and we anticipate that this technique will lead to advances for two-dimensional devices more broadly. |
| Databáze: | OpenAIRE |
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