Influence of phosphorus on the growth and the photoluminescence properties of Si-NCs formed in P-doped SiO/SiO 2 multilayers
| Autor: | Michel Vergnat, Rémi Demoulin, Denis M. Zhigunov, Hervé Rinnert, Xavier Devaux, Philippe Pareige, Fatme Trad, Mathieu Stoffel, Etienne Talbot, Alexandre Bouché, Alaa E. Giba, Sebastien Geiskopf |
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| Přispěvatelé: | Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), National Institute of Laser Enhanced Sciences (NILES), Cairo University, Skolkovo Institute of Science and Technology [Moscow] (Skoltech), Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), ANR-18-CE09-0034,DONNA,Dopage à l'échelle nano(2018), ANR-15-IDEX-0004,LUE,Isite LUE(2015), Université de Lorraine (UL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU) |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Photoluminescence Annealing (metallurgy) Analytical chemistry Phase separation chemistry.chemical_element 02 engineering and technology Atom probe 01 natural sciences law.invention [SPI.MAT]Engineering Sciences [physics]/Materials law 0103 physical sciences Scanning transmission electron microscopy Doping General Materials Science 010302 applied physics Nanoscale analysis Phosphorus [CHIM.MATE]Chemical Sciences/Material chemistry 021001 nanoscience & nanotechnology Si nanocrystals chemistry Nanocrystal Quantum dot Phosphorous [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] 0210 nano-technology |
| Zdroj: | Nanoscale Nanoscale, 2021, ⟨10.1039/D1NR04765E⟩ Nanoscale, Royal Society of Chemistry, 2021, ⟨10.1039/D1NR04765E⟩ |
| ISSN: | 2040-3364 2040-3372 |
| Popis: | International audience; This work reports on the influence of phosphorous atoms on the phase separation process and optical properties of silicon nanocrystals (Si-NCs) embedded in phosphorus doped SiO/SiO 2 multilayers. Doped SiO/SiO 2 multilayers with different P contents have been prepared by coevaporation and subsequently annealed at different temperatures up to 1100 °C. The sample structure and the localization of P atoms were both studied at the nanoscale by scanning transmission electron microscopy and atom probe tomography. It is found that P incorporation modifies the mechanism of Si-NC growth by promoting the phase separation during the postgrowth-annealing step, leading to nanocrystals formation at lower annealing temperatures as Page 38 of 72 Nanoscale compared to undoped Si-NCs. Hence, the maximum of Si-NC related photoluminescence (PL) intensity is achieved for annealing temperatures lower than 900 °C. It is also demonstrated that the Si-NCs mean size increases in the presence of P, which is accompanied by a redshift of the Si-NC related emission. The influence of the phosphorus content on the PL properties is studied using both room temperature and low temperature measurements. It is shown that for a P content lower than about 0.1 at. %, P atoms contribute to significantly improve the PL intensity. This effect is attributed to the P-induced-reduction of the number of non-radiative defects at the interface between Si-NCs and SiO 2 matrix, which is discussed in comparison with hydrogen passivation of Si-NCs. In contrast, for increasing P contents, the PL intensity strongly decreases, which is explained by the growth of Si-NCs reaching sizes that are too large to ensure quantum confinement and to the localization of P atoms inside Si-NCs. |
| Databáze: | OpenAIRE |
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