AlGaN/GaN MISHEMT with hBN as gate dielectric
| Autor: | Myriam Moreau, Ali Soltani, J.C. De Jaeger, P. Thevenin, J.-C. Gerbedoen, M. Mattalah |
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| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire Avancé de Spectroscopie pour les Intéractions la Réactivité et l'Environnement - UMR 8516 (LASIRE), Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Centrale Lille Institut (CLIL), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2009 |
| Předmět: |
Materials science
Gate dielectric Insulator (electricity) Gallium nitride 02 engineering and technology MISHEMTs 7. Clean energy 01 natural sciences law.invention chemistry.chemical_compound Electrical resistivity and conductivity Plasma-enhanced chemical vapor deposition law 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering Thin film 010302 applied physics HBN thin film HEMTs business.industry Mechanical Engineering Transistor General Chemistry [CHIM.MATE]Chemical Sciences/Material chemistry 021001 nanoscience & nanotechnology Electronic Optical and Magnetic Materials Semiconductor chemistry Optoelectronics 0210 nano-technology business |
| Zdroj: | Diamond and Related Materials Diamond and Related Materials, Elsevier, 2009, 18, pp.1039-1042. ⟨10.1016/j.diamond.2009.02.018⟩ Diamond and Related Materials, 2009, 18, pp.1039-1042. ⟨10.1016/j.diamond.2009.02.018⟩ Diamond and Related Materials, Elsevier, 2009, 18, pp.1039-1042 HAL Diamond and Related Materials, 2009, 18, pp.1039-1042 |
| ISSN: | 0925-9635 |
| Popis: | Metal/Insulator/Semiconductor AlGaN/GaN High Electron Mobility Transistors (MISHEMTs) on sapphire substrate were fabricated with hexagonal Boron Nitride (hBN) thin film as gate dielectric. The hBN thin film, deposited by MW-PECVD, is an insulator permitting to obtain a low leakage current gate, an interface state density as low as 5 × 1011 cm−2 eV−1 for hBN/AlGaN interface and low roughness surface less than 0.4 nm. HBN thin film is deposited to have optical c-axis oriented weakly tilted to the perpendicular at the AlGaN barrier surface and to increase the lateral electrical resistivity. DC measurement on MISHEMT exhibits promising performance for microwave power devices associated to a good gate charge control in enhancement mode. |
| Databáze: | OpenAIRE |
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