Effect of carrier gas on GaN epilayer characteristics

Autor:	N. Thillosen, Y. S. Cho, Zdeněk Sofer, Hilde Hardtdegen, N. Kaluza, R. Steins, Hans Lüth
Rok vydání:	2006
Předmět:	Diffraction Photoluminescence Hydrogen Analytical chemistry chemistry.chemical_element Condensed Matter Physics Epitaxy symbols.namesake chemistry symbols ddc:530 Metalorganic vapour phase epitaxy Gas composition Dislocation Raman spectroscopy
Zdroj:	Physica status solidi / C 3, 1408-1411 (2006). doi:10.1002/pssc.200565121
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.200565121
Popis:	Metalorganic vapor phase epitaxy (MOVPE) of GaN was performed using hydrogen (H2), nitrogen (N2) and H2/N2mixtures thereof as the carrier gas in the high temperature buffer growth range. The effect of carrier gas on the structural and morphological characteristics of the epilayers was systematically studied using interference and atomic force microscopy (AFM), photoluminescence (PL) measurements at 2 K, Raman spectroscopy and X-ray diffraction (XRD). The higher the N2 content in the carrier gas, the more pinholes are observed, the lower compressive strain and the higher dislocation density in the layers. A carrier gas composition range was defined at which GaN layers with acceptable structural and morphological characteristics are achieved. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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