Programmable Dynamics of Exchange‐Biased Domain Wall via Spin‐Current‐Induced Antiferromagnet Switching
| Autor: | Kyoung-Woong Moon, Bao Xuan Tran, Soong-Geun Je, Chanyong Hwang, Changsoo Kim, Seungmo Yang, Won-Chang Choi, Hyun-Joong Kim, Jung-Il Hong |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Magnetic domain
Field (physics) General Chemical Engineering Science General Physics and Astronomy Medicine (miscellaneous) antiferromagnet switching Biochemistry Genetics and Molecular Biology (miscellaneous) Magnetization Miniaturization General Materials Science Research Articles Physics business.industry Dzyaloshinskii–Moriya interaction General Engineering Magnetic field Domain wall (magnetism) Exchange bias spin‐Hall current exchange bias magnetic domain wall motion Optoelectronics Electric current business Research Article |
| Zdroj: | Advanced Science Advanced Science, Vol 8, Iss 17, Pp n/a-n/a (2021) |
| ISSN: | 2198-3844 |
| Popis: | Magnetic domain wall (DW) motion in perpendicularly magnetized materials is drawing increased attention due to the prospect of new type of information storage devices, such as racetrack memory. To augment the functionalities of DW motion‐based devices, it is essential to improve controllability over the DW motion. Other than electric current, which is known to induce unidirectional shifting of a train of DWs, an application of in‐plane magnetic field also enables the control of DW dynamics by rotating the DW magnetization and consequently modulating the inherited chiral DW structure. Applying an external bias field, however, is not a viable approach for the miniaturization of the devices as the external field acts globally. Here, the programmable exchange‐coupled DW motion in the antiferromagnet (AFM)/ferromagnet (FM) system is demonstrated, where the role of an external in‐plane field is replaced by the exchange bias field from AFM layer, enabling the external field‐free modulations of DW motions. Interestingly, the direction of the exchange bias field can also be reconfigured by simply injecting spin currents through the device, enabling electrical and programmable operations of the device. Furthermore, the result inspires a prototype DW motion‐based device based on the AFM/FM heterostructure, that could be easily integrated in logic devices. The role of magnetic field in the ferromagnetic domain‐wall (DW) motions within a micropatterned magnetic layer can be efficiently overtaken by the effective field from adjacent exchange‐coupled antiferromagnet. Using the spin structure of antiferromagnet controllable with spin current, highly adjusted motion of exchange‐coupled DW is demonstrated showing a prospect of field‐free electrical operations of DW‐based spintronics devices. |
| Databáze: | OpenAIRE |
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