Crossbar Arrays based on 'Wall' Phase-Change Memory (PCM) and Ovonic- Threshold Switching (OTS) Selector: a Device Integration Challenge Towards New Computing Paradigms in Embedded Applications
| Autor: | Bourgeois, G., Meli, V., Antonelli, R., Socquet-Clerc, C., Magis, T., Laulagnet, F., Hemard, B., Bernard, M., Fellouh, L., Dezest, P., Krawczyk, J., Dominguez, S., Baudin, F., Garrione, J., Pellissier, C., Dallery, J.-A., Castellani, N., Cyrille, M.-C., Charpin, C., Andrieu, F., Navarro, G. |
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| Přispěvatelé: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), IEEE, European Project: 101007321,StorAlge |
| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | IEEE EDTM 2023-7th IEEE Electron Devices Technology and Manufacturing IEEE EDTM 2023-7th IEEE Electron Devices Technology and Manufacturing, IEEE, Mar 2023, SEOUL, South Korea. ⟨10.1109/EDTM55494.2023.10102961⟩ |
| DOI: | 10.1109/edtm55494.2023.10102961 |
| Popis: | International audience; In this work, we demonstrate the integration feasibility of Crossbar arrays based on Ovonic-Threshold Switching (OTS) selector and "Wall"-based Phase-Change Memory, realized with a "Double-Patterned Self-Aligned" (DPSA) structure in the Back-End-of-Line (BEOL) of the CMOS fabrication. We fabricated devices with critical dimensions down to 60 nm×80 nm, integrating materials providing improved thermal stability (against BEOL thermal budget). Preliminary statistical electrical tests performed in 1 kb 1T1S1R arrays confirm the devices correct programming and cycling operations. These results pave the way to the integration of Crossbar arrays in embedded applications. |
| Databáze: | OpenAIRE |
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