Fabrication of 24-MHz-disk resonators with silicon passive integration technology
| Autor: | Lionel Buchaillot, Bernard Legrand, F. Neuilly, P. Philippe, A. Summanwar, M. Sworowski |
|---|---|
| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF) |
| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: |
010302 applied physics
Microelectromechanical systems Fabrication Materials science Silicon business.industry Silicon on insulator chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials Surface micromachining Resonator chemistry Q factor visual_art 0103 physical sciences Electronic component Electronic engineering visual_art.visual_art_medium Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | IEEE Electron Device Letters IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2010, 31, pp.23-25. ⟨10.1109/LED.2009.2034542⟩ IEEE Electron Device Letters, 2010, 31, pp.23-25. ⟨10.1109/LED.2009.2034542⟩ |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/LED.2009.2034542⟩ |
| Popis: | A new approach for the fabrication of large contour-mode single-crystal silicon resonators has been demonstrated without the use of SOI substrates. Twenty-four-megahertz disk resonators have been built thanks to industrial facilities dedicated to the integration of passive components on silicon and exhibit a good compromise between the quality factor higher than 50 000 and the motional resistance of a few kiloohms. |
| Databáze: | OpenAIRE |
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