Photoconductance in magnetic tunnel junctions
| Autor: | Koller, P.H.P., Vanhelmont, F. W.M., Coehoorn, R., de Jonge, W.J.M., Fidler, J., Hillebrands, B., Ross, C., Weller, D., Folks, L., Hill, E., Vazquez Villalabeitia, M., Bain, J. A., De Boeck, Jo, Wood, R. |
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| Přispěvatelé: | Applied Physics, Molecular Materials and Nanosystems, Physics of Nanostructures |
| Jazyk: | angličtina |
| Rok vydání: | 2002 |
| Předmět: |
Permalloy
Magnetoresistive random-access memory Materials science Condensed matter physics Magnetoresistance Giant magnetoresistance equipment and supplies Electronic Optical and Magnetic Materials Solution of Schrödinger equation for a step potential Tunnel effect Tunnel junction Electrical and Electronic Engineering human activities Quantum tunnelling |
| Zdroj: | INTERMAG Europe 2002-IEEE International Magnetics Conference IEEE Transactions on Magnetics, 38(5):1042327, 2712-2714. Institute of Electrical and Electronics Engineers |
| ISSN: | 0018-9464 |
| Popis: | Summary form only given. The applicability of magnetic tunnel junctions strongly depends on the electrical properties of the oxide barrier. The height and thickness of the energy barrier determines the resistance-area product of the junction, which is an important factor in the application of microstructured devices, such as MRAM. Previously the barrier height has been determined in an indirect way, namely by fitting the Simmons (1963) or Brinkman (1970) equation to the current-voltage characteristics of the junction. We have used a photoconductance set-up with which the transport properties across the insulating layer can be investigated. For the first time this technique has been applied to magnetic tunnel junctions, so that the potential step at the barrier/electrode interfaces can be determined in a direct way. |
| Databáze: | OpenAIRE |
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