Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches
| Autor: | Marcel A. Verheijen, Hcm Harm Knoops, Wmm Erwin Kessels, Fred Roozeboom, Ijm Ivo Erkens, W. Keuning |
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| Přispěvatelé: | Plasma & Materials Processing, Atomic scale processing, Processing of low-dimensional nanomaterials |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Thickness measurement
Scanning electron microscope Thin films General Physics and Astronomy Pulsed laser deposition HOL - Holst Nanotechnology High resolution transmission electron microscopy 02 engineering and technology Chemical vapor deposition High aspect ratio trenches 010402 general chemistry 01 natural sciences Atomic layer deposition Deposition (phase transition) Physical and Theoretical Chemistry Thin film High-resolution transmission electron microscopy Metallic films Platinum TS - Technical Sciences Industrial Innovation business.industry Chemistry 021001 nanoscience & nanotechnology Vapor deposition 0104 chemical sciences Transmission electron microscopy ALD Pt thin films Optoelectronics Nano Technology 0210 nano-technology business |
| Zdroj: | Journal of Chemical Physics, 5, 146 Journal of Chemical Physics, 146(5):052818. American Chemical Society |
| ISSN: | 1089-7690 0021-9606 |
| DOI: | 10.1063/1.4972120 |
| Popis: | To date, conventional thermal atomic layer deposition (ALD) has been the method of choice to deposit high-quality Pt thin films grown typically from (MeCp)PtMe3 vapor and O2 gas at 300 °C. Plasma-assisted ALD of Pt using O2 plasma can offer several advantages over thermal ALD, such as faster nucleation and deposition at lower temperatures. In this work, it is demonstrated that plasma-assisted ALD at 300 °C also allows for the deposition of highly conformal Pt films in trenches with high aspect ratio ranging from 3 to 34. Scanning electron microscopy inspection revealed that the conformality of the deposited Pt films was 100% in trenches with aspect ratio (AR) up to 34. These results were corroborated by high-precision layer thickness measurements by transmission electron microscopy for trenches with an aspect ratio of 22. The role of the surface recombination of O-radicals and the contribution of thermal ALD reactions is discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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