Understanding Charge Transport in Mixed Networks of Semiconducting Carbon Nanotubes
| Autor: | Jana Zaumseil, Florentina Gannott, Yuriy Zakharko, Marcel Rother, Stefan P. Schießl |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Electron mobility
Nanotube Photoluminescence Materials science Band gap Nanotechnology 02 engineering and technology Carbon nanotube Electroluminescence 010402 general chemistry 01 natural sciences law.invention electroluminescence Condensed Matter::Materials Science law General Materials Science single-walled carbon nanotubes business.industry Condensed Matter::Other 021001 nanoscience & nanotechnology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 0104 chemical sciences Optical properties of carbon nanotubes network transport Optoelectronics Field-effect transistor photoluminescence 0210 nano-technology business Research Article |
| Zdroj: | ACS Applied Materials & Interfaces |
| ISSN: | 1944-8252 1944-8244 |
| Popis: | The ability to select and enrich semiconducting single-walled carbon nanotubes (SWNT) with high purity has led to a fast rise of solution-processed nanotube network field-effect transistors (FETs) with high carrier mobilities and on/off current ratios. However, it remains an open question whether it is best to use a network of only one nanotube species (monochiral) or whether a mix of purely semiconducting nanotubes but with different bandgaps is sufficient for high performance FETs. For a range of different polymer-sorted semiconducting SWNT networks, we demonstrate that a very small amount of narrow bandgap nanotubes within a dense network of large bandgap nanotubes can dominate the transport and thus severely limit on-currents and effective carrier mobility. Using gate-voltage-dependent electroluminescence, we spatially and spectrally reveal preferential charge transport that does not depend on nominal network density but on the energy level distribution within the network and carrier density. On the basis of these results, we outline rational guidelines for the use of mixed SWNT networks to obtain high performance FETs while reducing the cost for purification. |
| Databáze: | OpenAIRE |
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