n-Type doping of epsilon-Ga2O3 epilayers by high-temperature tin diffusion
| Autor: | Attila Németh, Roberto Fornari, Matteo Bosi, Alessio Lamperti, Alessio Bosio, Ildikó Cora, Antonella Parisini, Carmine Borelli, Zsolt Fogarassy, Z. Zolnai, Salvatore Vantaggio, Béla Pécz, Laura Fornasini |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Polymers and Plastics business.industry Diffusion Doping Metals and Alloys chemistry.chemical_element 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Variable-range hopping Electronic Optical and Magnetic Materials chemistry Electrical resistivity and conductivity 0103 physical sciences Ceramics and Composites Optoelectronics Thin film 0210 nano-technology Tin business Electrical characterization Sn-doping epsilon-Ga2O3 |
| Zdroj: | Acta materialia 210 (2021): 116848-1–116848-9. doi:10.1016/j.actamat.2021.116848 info:cnr-pdr/source/autori:Bosio A.; Parisini A.; Lamperti A.; Borelli C.; Fornasini L.; Bosi M.; Cora I.; Fogarassy Z.; Pecs B.; Zolnai Z.; Nemeth A.; Vantaggio S.; Fornari R./titolo:n-Type doping of epsilon-Ga2O3 epilayers by high-temperature tin diffusion/doi:10.1016%2Fj.actamat.2021.116848/rivista:Acta materialia/anno:2021/pagina_da:116848-1/pagina_a:116848-9/intervallo_pagine:116848-1–116848-9/volume:210 |
| Popis: | The good control of the n-type doping is a key issue for the fabrication of efficient devices based on e-Ga2O3 epilayers. In this work we studied the possibility of doping the e-Ga2O3 thin films, epitaxially grown on c-oriented sapphire by metal-organic chemical vapor deposition, by means of a post-deposition treatment. For the first time, the n-type doping was achieved by depositing a tin-rich SnO2 film on top of the e-Ga2O3 layer and keeping this bi-layer system for 4 h at a temperature of 600 °C in an evacuated furnace. The diffusion of Sn atoms into the e-Ga2O3 film is evidenced by time-of-flight secondary-ion mass spectrometry depth profiles. Room-temperature resistivity of the order of 1 Ω•cm is obtained and the electrical characterization revealed a conduction mechanism based on variable range hopping, according to the Mott's model. |
| Databáze: | OpenAIRE |
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