Silicon-on-insulator resonant cavity photodiode without a slow carrier diffusion tail

Autor:	Willem Hoekstra, Gert W. t'Hooft, V.S. Sinnis, W.B. de Boer, Alan P. Morrison, M. Seto, Y. Watabe
Rok vydání:	1999
Předmět:	Materials science Silicon business.industry chemistry.chemical_element Silicon on insulator Substrate (electronics) Capacitance Photodiode law.invention Responsivity Wavelength Optics chemistry law Optoelectronics business Current density
Zdroj:	ResearcherID Scopus-Elsevier
ISSN:	0277-786X
DOI:	10.1117/12.342802
Popis:	We report on a novel silicon-based resonant cavity photodiode with a buried silicon dioxide layer as the bottom reflector. The buried oxide is created by using a separation by implantation of oxygen technique. The device shows large Fabry-Perot oscillations. Resonant peaks and anti-resonant troughs are observed as a function of the wavelength, with a peak responsivity of about 50 mA/W at 650 nm and 709 nm. The leakage current density is 85 pA/mm 2 at -5 V, and the average zero-bias capacitance is 12 pF/mm 2 . We also demonstrate that the buried oxide prevents carriers generated deep within the substrate from reaching the top contacts, thus removing any slow carrier diffusion tail from the impulse response.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::427b1630344d735e71375c2a3a6134eb https://doi.org/10.1117/12.342802 Zobrazit plný text záznamu